• DocumentCode
    1920119
  • Title

    Drain Current DLTS Measurements of MBE-Grown GaAs/InyGa1-yAs/AlxGa1-xAs HEMTs

  • Author

    Haddab, Y. ; Py, M.A. ; Bühlmann, H.J. ; Ilegems, M.

  • Author_Institution
    Institut de Micro et Optoelectronique, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    547
  • Lastpage
    550
  • Abstract
    Modulation-doped GaAs/In0.25Ga0.75As/Al0.3Ga0.7 As HEMT structures were grown using different MBE-growth temperatures and In0.25Ga0.75As channel thicknesses. Drain current DLTS measurements performed on these samples using a Fourier-Transform technique show that the concentrations of both bulk and interface traps depend greatly on growth temperature. In addition, a broadening of one of the DLTS peaks was observed for high channel thickness and is shown to be related to a high increase in dislocation concentration.
  • Keywords
    Capacitive sensors; Current measurement; Epitaxial layers; Gallium arsenide; HEMTs; Interface states; MODFETs; Performance evaluation; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920119