Title :
Drain Current DLTS Measurements of MBE-Grown GaAs/InyGa1-yAs/AlxGa1-xAs HEMTs
Author :
Haddab, Y. ; Py, M.A. ; Bühlmann, H.J. ; Ilegems, M.
Author_Institution :
Institut de Micro et Optoelectronique, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Abstract :
Modulation-doped GaAs/In0.25Ga0.75As/Al0.3Ga0.7 As HEMT structures were grown using different MBE-growth temperatures and In0.25Ga0.75As channel thicknesses. Drain current DLTS measurements performed on these samples using a Fourier-Transform technique show that the concentrations of both bulk and interface traps depend greatly on growth temperature. In addition, a broadening of one of the DLTS peaks was observed for high channel thickness and is shown to be related to a high increase in dislocation concentration.
Keywords :
Capacitive sensors; Current measurement; Epitaxial layers; Gallium arsenide; HEMTs; Interface states; MODFETs; Performance evaluation; Temperature; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
