• DocumentCode
    1920122
  • Title

    Impact on Low-Frequency Noise Properties from Lateral Design of Differentially Grown SiGe HBTs

  • Author

    Sandén, M. ; Malm, B.G. ; Grahn, J.V. ; Östling, M.

  • Author_Institution
    Royal Institute of Technology, Kista, Sweden
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    564
  • Lastpage
    567
  • Keywords
    Boron; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Phase noise; Silicon germanium; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194840
  • Filename
    1503770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920122