• DocumentCode
    1920123
  • Title

    Peculiarities of Intersubband Transision Between Split Levels in Symmetrical Triple-Barrier Structures

  • Author

    Pashkovskii, A.B.

  • Author_Institution
    Fed. State Unitary Corp. R&PC lstok, Fryazino
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    603
  • Lastpage
    604
  • Abstract
    For symmetric three-barrier resonance tunnel structures with thin high barriers resonant transitions between the split-levels in a weak non-uniform high-frequency field are investigated. It is shown, that in spite of transitions between usual levels both in two, and in three-barrier structures, the probability of transitions between the split levels depends essentially not only on parity of perturbation but also on its form. The investigated effect brings up a question on the top limit of high-frequency conductivity in such systems.
  • Keywords
    resonant tunnelling devices; high-frequency conductivity; intersubband transition; split-levels; symmetric three-barrier resonance tunnel; symmetrical triple-barrier structures; Costs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368869
  • Filename
    4368869