Title :
Analysis of the Emitter Charge Storage in SiGe Heterojunction Bipolar Transistors with a Lightly Doped Emitter
Author :
van den Oever, L.C.M. ; Nanver, L.K. ; Slotboom, J.W.
Author_Institution :
Delft University of Technology, The Netherlands
fDate :
11-13 September 2000
Keywords :
Capacitance; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Silicon germanium; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194841
