DocumentCode
1920279
Title
P1–17: Controlled synthesis of Au and Ag/Au nanoparticles for fabrication of n-doped amorphous Si nanowire field emission cathode
Author
Huang, Chunmiao ; She, Juncong ; Deng, Shaozhi ; Chen, Jun ; Xu, Ningsheng
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2010
fDate
26-30 July 2010
Firstpage
62
Lastpage
63
Abstract
A technique was reported on controlled synthesis of Au and Au/Ag nanoparticles using thermal (500°C) annealing of Au thin film and Ag/Au bilayer. The density of the nanoparticles can be adjusted in a range of 2.8×109 cm-2 to 6.2×1010 cm-2. The nanoparticles were used as masks for fabrications of vertically aligned amorphous Si nanowires (a-SiNWs) using dry etching. The mechanisms on the density control of Au, Ag/Au nanoparticles and the etching processes of the amorphous Si were discussed.
Keywords
amorphous semiconductors; elemental semiconductors; etching; gold; nanoparticles; nanowires; semiconductor device manufacture; silicon; silver; Ag; Au; controlled synthesis; etching processes; fabrication; n-doped amorphous; nanoparticles; nanowire field emission cathode; thermal annealing; Annealing; Dry etching; Gold; Nanoparticles; Plasmas; Scanning electron microscopy; Silicon; Ag/Au bilayer; amorphous Si nanowires; plasma dry etching; thermal annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563180
Filename
5563180
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