P1–14: Collimation properties of molded molybdenum field emitters

Author

Helfenstein, Patrick ; Kirk, Eugenie ; Jefimovs, Konstantins ; Vogel, Thomas ; Escher, Conrad ; Fink, Hans-Werner ; Tsujino, Soichiro

Author_Institution

Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland

fYear

2010

fDate

26-30 July 2010

Firstpage

56

Lastpage

57

Abstract

We studied field electron emission properties of double-gate molybdenum field emitter arrays (FEA) with stacked gates of different aperture diameters. The collimation gate aperture was formed using a focused ion-beam (FIB) assisted process. This has the advantage of the aperture diameter as well as its geometry being precisely definable. Using a field-electron microscope, a reduction of the emission angle by a factor 9-10 was demonstrated.

Keywords

field emission electron microscopy; field emitter arrays; molybdenum; FIB assisted process; collimation properties; double-gate molybdenum field emitter arrays; field-electron microscope; focused ion-beam; geometry; Apertures; Cathodes; Electron beams; Fabrication; Field emitter arrays; Logic gates; Voltage measurement; double-gate field emitter array; electron beam collimation; electron optics; field electron emission; field emitter array; focused ion beam; molding method;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Conference_Location

Palo Alto, CA

Print_ISBN

978-1-4244-7889-7

Electronic_ISBN

978-1-4244-7888-0

Type

conf

DOI

10.1109/IVNC.2010.5563185

Filename

5563185