Title :
Electrical characterization of sol-gel derived PZT thin films
Author :
Bellur, Kashyap R. ; Al-Shareef, H.N. ; Rou, S.H. ; Gifford, K.D. ; Auciello, O. ; Kingon, A.I.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
Thin films of lead zirconate titanate (PZT) were deposited on a variety of substrates using the sol-gel process. These included Pt/Ti/SiO2/Si, RuO2/SiO2/Si, RuO2 /MgO, Pt/MgO, and Pt/Ti/MgO. Epitaxial, oriented, and polycrystalline films were obtained after annealing at 700°C for 10 min. Polycrystalline PZT films with RuO2 as top and bottom electrodes showed superior hysteresis and fatigue behavior as compared to such films on Pt. Epitaxial films on Pt/MgO and Pt/Ti/MgO displayed excellent fatigue behavior and large remnant polarization as compared to their polycrystalline counterparts on Pt/Ti/SiO2/Si. The results suggest that different fatigue mechanisms may be simultaneously operating
Keywords :
X-ray diffraction examination of materials; annealing; dielectric hysteresis; dielectric polarisation; epitaxial layers; fatigue; ferroelectric thin films; lead compounds; sol-gel processing; transmission electron microscope examination of materials; 10 mins; 700 C; PZT thin films; PbZrO3TiO3; Pt-MgO; Pt-Ti-MgO; Pt-Ti-SiO2-Si; RuO2-MgO; RuO2-SiO2-Si; TEM; X-ray diffraction; annealing; epitaxial film; fatigue mechanisms; ferroelectric thin film; hysteresis; oriented film; polycrystalline films; remnant polarization; sol-gel processing; Annealing; Electrodes; Fatigue; Hysteresis; Polarization; Semiconductor films; Sputtering; Substrates; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300595
