Electrical characterization of sol-gel derived PZT thin films

Author

Bellur, Kashyap R. ; Al-Shareef, H.N. ; Rou, S.H. ; Gifford, K.D. ; Auciello, O. ; Kingon, A.I.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

448

Lastpage

451

Abstract

Thin films of lead zirconate titanate (PZT) were deposited on a variety of substrates using the sol-gel process. These included Pt/Ti/SiO₂/Si, RuO₂/SiO₂/Si, RuO₂/MgO, Pt/MgO, and Pt/Ti/MgO. Epitaxial, oriented, and polycrystalline films were obtained after annealing at 700°C for 10 min. Polycrystalline PZT films with RuO₂ as top and bottom electrodes showed superior hysteresis and fatigue behavior as compared to such films on Pt. Epitaxial films on Pt/MgO and Pt/Ti/MgO displayed excellent fatigue behavior and large remnant polarization as compared to their polycrystalline counterparts on Pt/Ti/SiO₂/Si. The results suggest that different fatigue mechanisms may be simultaneously operating

Keywords

X-ray diffraction examination of materials; annealing; dielectric hysteresis; dielectric polarisation; epitaxial layers; fatigue; ferroelectric thin films; lead compounds; sol-gel processing; transmission electron microscope examination of materials; 10 mins; 700 C; PZT thin films; PbZrO3TiO3; Pt-MgO; Pt-Ti-MgO; Pt-Ti-SiO₂-Si; RuO₂-MgO; RuO₂-SiO₂-Si; TEM; X-ray diffraction; annealing; epitaxial film; fatigue mechanisms; ferroelectric thin film; hysteresis; oriented film; polycrystalline films; remnant polarization; sol-gel processing; Annealing; Electrodes; Fatigue; Hysteresis; Polarization; Semiconductor films; Sputtering; Substrates; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300595

Filename

300595