9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays

Author

Ghosh, Nikkon ; Kang, Weng Poo ; Raina, Supil ; Davidson, Jim

Author_Institution

Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA

fYear

2010

fDate

26-30 July 2010

Firstpage

193

Lastpage

194

Abstract

This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-diamond, have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nano-diamond field emission behaviors.

Keywords

cathodes; electron emission; nanofabrication; sputter etching; ballast resistor; electron emission; field screening; micropatterned silicon pillar arrays; nanodiamond emitter arrays; nanodiamond field emission behaviors; Diamond-like carbon; Electric fields; Electronic ballasts; Fabrication; Nanostructures; Silicon; Substrates; ballast resistor; deep reactive ion etching; field emission; field screening; ridge-structured nano-diamond; silicon pillar array;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Conference_Location

Palo Alto, CA

Print_ISBN

978-1-4244-7889-7

Electronic_ISBN

978-1-4244-7888-0

Type

conf

DOI

10.1109/IVNC.2010.5563190

Filename

5563190