Title :
Radiation Effects in Microwave Semiconductor Devices
Author_Institution :
Specialized Electron. Syst., Moscow
Abstract :
The basic radiation effects in microwave semiconductor devices are presented in this paper. A comparative analysis of radiation hardness is carried out for the microwave transistors and diodes.
Keywords :
microwave diodes; microwave transistors; radiation hardening (electronics); microwave diodes; microwave semiconductor devices; microwave transistors; radiation hardness; Gallium arsenide; Microwave devices; Microwave transistors; P-i-n diodes; PIN photodiodes; Radiation effects; Semiconductor devices;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368889
