DocumentCode :
1920527
Title :
Radiation Effects in Heterostructures on Gallium Arsenide
Author :
Gromov, D.V. ; Polevich, S.A. ; Elesin, V.V.
Author_Institution :
Specialized Electron. Syst., Moscow
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
657
Lastpage :
658
Abstract :
The radiation effects in GaAs Pseudomorphic High Electron Mobility Transistors (pHEMT) and Resonant Tunneling Diodes (RTD) have been experimentally investigated.
Keywords :
III-V semiconductors; gallium arsenide; power HEMT; resonant tunnelling diodes; GaAs; RTD; gallium arsenide; heterostructures; pHEMT; pseudomorphic high electron mobility transistors; radiation effects; resonant tunneling diodes; Degradation; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; PHEMTs; Physics; Radiation effects; Road transportation; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368890
Filename :
4368890
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1920527
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