DocumentCode :
1920543
Title :
Effects of Powerful Pulsed Microwave Electromagnetic Influence in Low Noise Amplifiers
Author :
Gromov, D.V. ; Polevich, S.A.
Author_Institution :
Specialized Electron. Syst., Moscow
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
659
Lastpage :
660
Abstract :
The degradation effects of powerful pulsed MW (single tone) and ultra wideband (UWB) electromagnetic influences in several types of low noise amplifiers (LNA) were experimentally investigated.
Keywords :
Schottky gate field effect transistors; bipolar transistors; electromagnetic pulse; low noise amplifiers; radiation hardening (electronics); LNA; MESFET; bipolar transistor; degradation effects; low noise amplifiers; pulsed microwave electromagnetic effects; ultra wideband effects; Broadband amplifiers; Degradation; EMP radiation effects; Electromagnetic interference; Gallium arsenide; High power amplifiers; Low-noise amplifiers; Microwave amplifiers; Pulse amplifiers; Road transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368891
Filename :
4368891
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1920543
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