Title :
9.2: Correlation between low threshold emission and C-N bond in nitrogen-doped diamond
Author :
Masuzawa, Tomoaki ; Kudo, Yuki ; Saito, Ichitaro ; Yamada, Takatoshi ; Okano, Ken
Author_Institution :
Dept. of Mater. Sci., Int. Christian Univ., Mitaka, Japan
Abstract :
Field emission properties of nitrogen(N)-doped diamond with different dopant concentrations were investigated. Time-of-flight secondary ion mass spectroscopy measurement on the diamond samples showed a correlation between threshold field and the intensity of carbon(C)-nitrogen(N). This suggests that the N incorporation in the form of C-N, may be responsible for the extremely low threshold emission from heavily N-doped diamond.
Keywords :
field emission; mass spectroscopy; time of flight spectroscopy; C-N bond; dopant concentrations; nitrogen-doped diamond; threshold emission; time-of-flight secondary ion mass spectroscopy; Correlation; Diamond-like carbon; Electron emission; Mass spectroscopy; Nitrogen; Threshold voltage; Diamond; Field Emission; Nitrogen Doped; SIMS;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563192
