• DocumentCode
    1920576
  • Title

    8.5: Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices

  • Author

    Jin, Xiuguang ; Maeda, Yuya ; Sasaki, Toshio ; Arai, Shigeo ; Fuchi, Shingo ; Ujihara, Toru ; Takeda, Yoshikazu

  • Author_Institution
    Dept. of Crystalline Mater. Sci., Nagoya Univ., Nagoya, Japan
  • fYear
    2010
  • fDate
    26-30 July 2010
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    The spin-polarization of electrons from the GaAs/GaAsP superlattice on GaAs is higher than that from the same superlattice on GaP. TEM observation revealed that in the superlattice on GaAs stacking faults were the main defects but in the superlattice on GaP local thickness modulation of superlattice layers was prominent. Stacking faults and thickness modulation have different effects on the spin-polarization.
  • Keywords
    III-V semiconductors; electron spin polarisation; gallium arsenide; photocathodes; superlattices; transmission electron microscopy; GaAs; TEM observation; local thickness modulation; photocathodes; spin-polarization; strained superlattices; Buffer layers; Cathodes; Gallium arsenide; Modulation; Stacking; Substrates; Superlattices; Photocathode; Spin-polarization; Superlattice; Thickness modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
  • Conference_Location
    Palo Alto, CA
  • Print_ISBN
    978-1-4244-7889-7
  • Electronic_ISBN
    978-1-4244-7888-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2010.5563194
  • Filename
    5563194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920576