DocumentCode
1920612
Title
Characterization of 4.5 kV/2.4 kA press pack IGBT including comparison with IGCT
Author
Alvarez, R. ; Filsecker, Felipe ; Buschendorf, Martin ; Bernet, Steffen
Author_Institution
Power Electron. Lab., Tech. Univ. Dresden, Dresden, Germany
fYear
2013
fDate
15-19 Sept. 2013
Firstpage
260
Lastpage
267
Abstract
IGBT press pack devices have become a serious competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. The main focus of the paper is the characterization of a 125 mm, 4.5 kV, 2.4kA press pack SPT-plus-IGBT and the corresponding freewheeling diode at hard switching. Furthermore, the losses, the behavior and the semiconductor stress (peak power) are investigated. Finally the device characteristics are compared to that of state-of-the-art 91mm, 4.5 kV, 3.8 kA IGCTs.
Keywords
insulated gate bipolar transistors; power semiconductor diodes; IGBT press pack devices; IGCT; active turn-off capability; current 2.4 kA; freewheeling diode; hard switching; medium voltage power semiconductors; semiconductor stress; voltage 4.5 kV; Clamps; Insulated gate bipolar transistors; Logic gates; Presses; Semiconductor diodes; Temperature measurement; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/ECCE.2013.6646709
Filename
6646709
Link To Document