• DocumentCode
    1920683
  • Title

    Room-Temperature Electroluminescence from Er-Implanted Semi-Insulating Polycrystalline Silicon

  • Author

    Lombardo, S. ; Campisano, S.U. ; van den Hoven, G.N. ; Polman, A.

  • Author_Institution
    Dipartimento di Fisica della Universitá, Corso Italia, 57, I 95129 Catania Italy.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    657
  • Lastpage
    660
  • Abstract
    Sharp room-temperature luminescence at 1.54 ¿m in erbium-doped semi-insulating polycrystalline silicon (SIPOS) is demonstrated. Electroluminescence due to intra-4f transitions of Er3+ ions was investigated in metal-SIPOS-silicon devices. The compatibility of SIPOS with VLSI technology combined with the demonstration that Er in SIPOS can be electrically excited, indicates that Er-doped SIPOS is a very interesting candidate as active material for electrically stimulated light emission in silicon-based opto-electronics.
  • Keywords
    Annealing; Electroluminescence; Erbium; Luminescence; Optical films; Optical materials; Particle beam optics; Photoluminescence; Silicon; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920683