DocumentCode
1920752
Title
LDMOS electro-thermal model validation from large-signal time-domain measurements
Author
Gaddi, R. ; Pla, J.A. ; Benedikt, J. ; Tasker, P.J.
Author_Institution
Sch. of Eng., Cardiff Univ., UK
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
399
Abstract
Analytical nonlinear model validation through large-signal time-domain characterization has been greatly improved, by establishing a novel link between measurement and simulation. Investigation on a silicon LDMOS device and its nonlinear electro-thermal model positively identifies links between model formulation and amplifier requirements for future telecommunication systems.
Keywords
MOSFET; circuit CAD; power amplifiers; radiofrequency amplifiers; semiconductor device models; time-domain analysis; CAD; LDMOS electro-thermal model; RF power amplifier; amplifier requirements; large-signal time-domain measurements; model formulation; model validation; nonlinear model; telecommunication systems; Analytical models; Current measurement; Design automation; Power amplifiers; Power system modeling; Pulse amplifiers; Radiofrequency amplifiers; Radiofrequency identification; Silicon; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966915
Filename
966915
Link To Document