DocumentCode
1920849
Title
A simple bias dependant LF FET noise model for CAD
Author
Angelov, I. ; Kozhuharov, R. ; Zirath, H.
Author_Institution
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
407
Abstract
Extensive multi-bias low frequency noise (LFN) measurements were performed on MESFET, HEMT and InP HEMT devices in order to obtain a simple bias dependent LF noise model usable in CAD tools and consistent with small and large signal models and high frequency noise models. The model was experimentally evaluated with a 10 GHz DRO and good correspondence was obtained between the modelled and measured LFN.
Keywords
Schottky gate field effect transistors; circuit CAD; dielectric resonator oscillators; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 10 GHz; DRO; bias dependant LF FET noise model; high frequency noise models; large signal models; multi-bias low frequency noise measurements; small signal models; FETs; Frequency; HEMTs; Indium phosphide; Low-frequency noise; MESFETs; Noise measurement; Oscillators; Performance evaluation; Power system modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966917
Filename
966917
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