Title :
A simple bias dependant LF FET noise model for CAD
Author :
Angelov, I. ; Kozhuharov, R. ; Zirath, H.
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Extensive multi-bias low frequency noise (LFN) measurements were performed on MESFET, HEMT and InP HEMT devices in order to obtain a simple bias dependent LF noise model usable in CAD tools and consistent with small and large signal models and high frequency noise models. The model was experimentally evaluated with a 10 GHz DRO and good correspondence was obtained between the modelled and measured LFN.
Keywords :
Schottky gate field effect transistors; circuit CAD; dielectric resonator oscillators; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 10 GHz; DRO; bias dependant LF FET noise model; high frequency noise models; large signal models; multi-bias low frequency noise measurements; small signal models; FETs; Frequency; HEMTs; Indium phosphide; Low-frequency noise; MESFETs; Noise measurement; Oscillators; Performance evaluation; Power system modeling;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966917
