Title :
Temperature-dependent modeling of high power MESFET using thermal FDTD method
Author :
Wojtasiak, W. ; Gryglewski, D.
Author_Institution :
Inst. of Radioelectron., Warsaw Univ. of Technol., Poland
Abstract :
A temperature-dependent model of high power MESFET based on the small signal extraction methodology is presented. The temperature dependencies of the MESFET equivalent circuit elements derived from experimental results describing long-term thermal effects and short-term thermal effects have been modeled by means of FDTD method using chip dimensions. The verification of the proposed model shows an excellent agreement of the experimental results with the theoretical analysis.
Keywords :
equivalent circuits; finite difference time-domain analysis; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; chip dimensions; equivalent circuit elements; high power MESFET; long-term thermal effects; short-term thermal effects; small signal extraction methodology; temperature-dependent modeling; thermal FDTD method; Equivalent circuits; Finite difference methods; Gallium arsenide; High power amplifiers; MESFET circuits; Power amplifiers; Power generation; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966918
