Title :
6.4: Fabrication of 4H-SiC cold field emitter arrays
Author :
Borsa, Tomoko ; Van Zeghbroeck, Bart
Author_Institution :
Dept. of Electr., Comput. & Energy Eng., Univ. of Colorado at Boulder, Boulder, CO, USA
Abstract :
A new fabrication method of SiC field emitter arrays has been developed. The new method involves the formation of three-dimensional silicon dioxide masks, dry etching, and tip sharpening. The field emitter arrays were successfully fabricated on 4H-SiC substrates with tip diameter less than 10 nm.
Keywords :
etching; field emitter arrays; silicon compounds; wide band gap semiconductors; 4H-SiC cold field emitter array fabrication; SiC; dry etching; three-dimensional silicon dioxide masks; tip sharpening; Chromium; Fabrication; Field emitter arrays; Needles; Silicon carbide; Substrates; SiC; dry etch; field emitter arrays; isotropic etch; sharpening;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563204
