Title :
Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation
Author :
Jungemann, C. ; Neinhues, B. ; Meinerzhagen, B.
Author_Institution :
University of Bremen, Germany
fDate :
24-26 September 2002
Keywords :
Analytical models; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Impact ionization; Radio frequency; Scattering; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194873
