Pulse characterization of trapping and thermal effects of microwave GaN power FETs

Author

Augaudy, S. ; Quere, R. ; Teyssier, J.P. ; Di Forte-Poisson, M.A. ; Cassette, S. ; Dessertenne, B. ; Delage, S.L.

Author_Institution

IRCOM, Limoges Univ., France

Volume

1

fYear

2001

fDate

20-24 May 2001

Firstpage

427

Abstract

An experimental characterization of GaN FETs is given in this paper. A pulsed I-V/pulsed S-parameters measurement set-up is used to investigate the trapping and thermal behavior of GaN MESFETs. It is shown that electrical performances are strongly affected by surface and substrate traps and that those effects are closely linked to the temperature of the device. RF measurements up to a drain voltage of 100 V and a temperature of 320/spl deg/C are presented.

Keywords

III-V semiconductors; S-parameters; electron traps; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device measurement; thermal analysis; wide band gap semiconductors; 100 V; 320 C; GaN; GaN MESFETs; electrical performance; microwave GaN power FETs; pulse characterization; pulsed I-V measurement; pulsed S-parameters measurement; substrate traps; surface traps; thermal effects; trapping effects; Current measurement; Electron traps; Gallium nitride; MESFETs; Microwave FETs; Microwave devices; Pulse measurements; Silicon carbide; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966922

Filename

966922