Title :
Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness
Author :
Kolhatkar, J.S. ; Salm, C. ; Knitel, M.J. ; Wallinga, H.
Author_Institution :
University of Twente, Enschede, The Netherlands
fDate :
24-26 September 2002
Keywords :
1f noise; CMOS technology; Current measurement; Fluctuations; Geometry; Low-frequency noise; MOSFET circuits; Noise measurement; Noise reduction; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194876
