DocumentCode
1921007
Title
Thermal transients in microwave active devices and their influence on intermodulation distortion
Author
David, S. ; Batty, W. ; Panks, A.J. ; Johnson, R.G. ; Snowden, C.M.
Author_Institution
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
431
Abstract
A fully physical transient thermal model is used to investigate the effects of temperature on the intermodulation distortion performance of microwave devices. A 24 mm, 60 finger PHEMT is used to compare measurements with predictions from the model. Results are in very good agreement and are a strong indication of thermally induced intermodulation distortion.
Keywords
high electron mobility transistors; intermodulation distortion; microwave devices; microwave transistors; semiconductor device models; transient analysis; IMD performance; PHEMT; intermodulation distortion; microwave active devices; physical transient thermal model; pseudomorphic HEMT; temperature effects; thermal transients; thermally induced IMD; Electromagnetic heating; Equations; Impedance; Intermodulation distortion; MMICs; Microwave devices; Power dissipation; Solid modeling; Temperature dependence; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966923
Filename
966923
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