DocumentCode
1921032
Title
Modeling semiconductor structures in CFD-ACE+ SEMI software
Author
Slusarczyk, Krzysztof ; Zawieja, Marta ; Podsiadly, Piotr Pawel ; Napieralski, Andrzej
Author_Institution
Dept. of Microelectron. & Comput. Sci., Tech. Univ. Lodz, Poland
fYear
2002
fDate
2002
Firstpage
361
Lastpage
362
Abstract
In this paper it new tool for simulating 2D and 3D semiconductor structures is presented. New module SEMI in CFD-ACEU+ software allows to simulate such devices as diodes, various MOS transistors or even IGBT fabricated in silicon or GaAs technology. It also allows to create user´s models with different doping, shape, and architecture to find out the most optimal structure for custom implementation. In this module also thermal problems, which occurs in such structures, can be analyzed.
Keywords
electronic engineering computing; semiconductor device models; 2D simulation; 3D simulation; CFD-ACEU+ SEMI software; GaAs; GaAs technology; IGBT; MOS transistor; Si; diode; semiconductor device model; silicon technology; thermal analysis; Geometry; Insulated gate bipolar transistors; MOSFETs; Mesh generation; Microelectronics; Semiconductor device doping; Semiconductor devices; Semiconductor diodes; Shape; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2002. Proceedings of the International Conference
Print_ISBN
966-553-234-0
Type
conf
DOI
10.1109/TCSET.2002.1015997
Filename
1015997
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