Title :
Impact of Parametric Fluctuations on Performance and Yield of Deep-Submicron Technologies
Author :
Tuinhout, Hans P.
Author_Institution :
Philips Research, Eindhoven, The Netherlands
fDate :
24-26 September 2002
Keywords :
Fluctuations; Geometry; MOSFET circuits; Statistics; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194879
