Title :
Two-tone intermodulation distortion simulations in the time domain using a quasi-2D physical pHEMT model
Author :
Rudge, P.J. ; Miles, R.E. ; Steer, M.B. ; Snowden, C.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
The need for both linear and efficient pHEMTs for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, two-tone time domain simulations of a microwave pHEMT using a quasi-two-dimensional physical device model in a CAD environment are presented. The model fully accounts for device-circuit interaction and is validated experimentally for a two-tone experiment around 5 GHz.
Keywords :
circuit CAD; circuit simulation; digital simulation; electronic engineering computing; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; time-domain analysis; 5 GHz; CAD environment; device-circuit interaction; intermodulation distortion simulations; microwave PHEMT; pseudomorphic HEMT; quasi-2D physical PHEMT model; two-tone IMD simulations; two-tone time domain simulations; Circuit simulation; Electrons; Integral equations; Intermodulation distortion; PHEMTs; Predictive models; Semiconductor process modeling; Solid modeling; Table lookup; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966925
