DocumentCode

1921146

Title

Gate Oxide Process Impact on RNCE for Advanced CMOS Transistors

Author

Arnaud, F. ; Bidaud, M.

Author_Institution

STMicroeletronics, Crolles, France

fYear

2002

fDate

24-26 September 2002

Firstpage

107

Lastpage

110

Keywords

Boron; CMOS process; Cobalt; Degradation; Gate leakage; Nitrogen; Oxidation; Rapid thermal annealing; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

conf

DOI

10.1109/ESSDERC.2002.194881

Filename

1503811