Title :
Gate Oxide Process Impact on RNCE for Advanced CMOS Transistors
Author :
Arnaud, F. ; Bidaud, M.
Author_Institution :
STMicroeletronics, Crolles, France
fDate :
24-26 September 2002
Keywords :
Boron; CMOS process; Cobalt; Degradation; Gate leakage; Nitrogen; Oxidation; Rapid thermal annealing; Threshold voltage; Transistors;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194881
