DocumentCode

1921204

Title

Channel Engineering Study for 50 nm P-Channel MOSFET

Author

Guegan, G. ; Souil, D. ; Deleonibus, S. ; Tedesco, S. ; Laviron, C. ; Previtali, B. ; Nier, M.E.

Author_Institution

CEA/LETI, Grenoble, France

fYear

2002

fDate

24-26 September 2002

Firstpage

119

Lastpage

122

Keywords

Annealing; Boron; Cost function; Doping profiles; Implants; Ion implantation; Length measurement; Lithography; MOSFET circuits; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

conf

DOI

10.1109/ESSDERC.2002.194884

Filename

1503814