DocumentCode
1921207
Title
Dark Current Noise Characteristics of Separate Absorption, Grading, Charge, and Multiplication InP/InGaAs Avalanche Photodiodes
Author
Ma, C.L.F. ; Deen, M.J. ; Tarof, L.E.
Author_Institution
Engineering Science, Simon Fraser University, Burnaby, B. C., V5A 1S6, Canada
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
727
Lastpage
730
Abstract
In this paper, we investigate low frequency noise in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs). In the APDs studied, we find that the dark current multiplication shot noise is proportional to M¿ with ¿ from 2.75 to 2.95. Flicker noise is observed in some APDs and it is believed to be due to leakage current sources.
Keywords
1f noise; Absorption; Avalanche photodiodes; Dark current; Indium gallium arsenide; Indium phosphide; Leakage current; Low-frequency noise; Photoconductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435817
Link To Document