• DocumentCode
    1921222
  • Title

    Far Infrared Detectors using p-Si1-xGex/Si Multiple Quantum Wells

  • Author

    Robbins, D.J. ; Stanaway, M B ; Millidge, S. ; Leong, W.Y. ; Glasper, J L

  • Author_Institution
    Defence Research Agency, St Andrews Road, Malvern, WR14 3PS, UK.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    731
  • Lastpage
    734
  • Abstract
    The first systematic study of p-Si1-xGex/Si multiple quantum well infrared detectors (QWIPs) grown by low pressure vapour phase epitaxy (LPVPE) is described. The inclusion of undoped Si1-xGex spacer layers adjacent to the p-doped alloy reduces the weakly temperature-dependent ``tunnelling´´ component of the dark current. The peak wavelength in the photoresponse spectrum is tuned between 7.2-10.2¿m by changing the Ge fraction, x, in the range between 0.15 alnd 0.08.
  • Keywords
    Dark current; Epitaxial growth; III-V semiconductor materials; Infrared detectors; Integrated circuit technology; Optical attenuators; Phase detection; Sensor arrays; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921222