Investigations on Poly-SiGe Gate in Full 0.1um CMOS Integration

Author

Tavel, Brice ; Monsi, Frédéric ; Ribot, Pascal ; Skotnicki, Thomas

Author_Institution

France Telecom R&D, France

fYear

2002

fDate

24-26 September 2002

Firstpage

127

Lastpage

130

Keywords

Boron; Doping; Electrodes; Germanium; Impurities; Inorganic materials; MOS devices; MOSFETs; Research and development; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194886

Filename

1503816

Link To Document