Title :
Investigations on Poly-SiGe Gate in Full 0.1um CMOS Integration
Author :
Tavel, Brice ; Monsi, Frédéric ; Ribot, Pascal ; Skotnicki, Thomas
Author_Institution :
France Telecom R&D, France
fDate :
24-26 September 2002
Keywords :
Boron; Doping; Electrodes; Germanium; Impurities; Inorganic materials; MOS devices; MOSFETs; Research and development; Telecommunications;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194886
