DocumentCode

1921317

Title

Influence of Source-drain Tunneling on the Subthreshold Behavior of sub-10nm Double-gate MOSFETs

Author

Staedele, M.

Author_Institution

Infineon Technologies, Munich, Germany

fYear

2002

fDate

24-26 September 2002

Firstpage

135

Lastpage

138

Keywords

MOSFETs; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

conf

DOI

10.1109/ESSDERC.2002.194888

Filename

1503818