A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser Annealing

Author

Kuriyama, H. ; Kiyama, S. ; Kuwahara, T. ; Noguchi, S. ; Nakano, S.

Author_Institution

Giant Electronics Technology Co., Ltd., Japan

fYear

1991

fDate

17-19 June 1991

Keywords

Annealing; Glass; Grain size; Heating; Laser transitions; Solid lasers; Substrates; Surface emitting lasers; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1991. 49th Annual

Conference_Location

Boulder, CO, USA

Print_ISBN

0-87942-647-0

Type

DOI

10.1109/DRC.1991.664674

Filename

664674

Link To Document