DocumentCode :
1921321
Title :
A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser Annealing
Author :
Kuriyama, H. ; Kiyama, S. ; Kuwahara, T. ; Noguchi, S. ; Nakano, S.
Author_Institution :
Giant Electronics Technology Co., Ltd., Japan
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Annealing; Glass; Grain size; Heating; Laser transitions; Solid lasers; Substrates; Surface emitting lasers; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664674
Filename :
664674
Link To Document :
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