Title :
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
Author :
Lipovetzky, J. ; Redin, E. ; Inza, M. Garcia ; Carbonetto, S. ; Faigon, A.
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
Abstract :
The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature.
Keywords :
MOSFET; annealing; dosimeters; gamma-ray effects; nanoelectronics; gamma-irradiation response; gate oxide thickness MOS dosimeters; metal oxide semiconductor dosimeters; radiation induced charge neutralization; switched bias irradiation; temperature effects; thermal annealing; threshold voltage evolution;
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications, 2009. EAMTA 2009. Argentine School of
Conference_Location :
San Carlos de Bariloche
Print_ISBN :
978-1-4244-4835-7
Electronic_ISBN :
978-9-8725-1029-9
