Title :
Domain orientation and piezoelectric properties of Ag doped PMN-PZT ceramics
Author :
Murty, K. V Ramana ; Murty, S. Narayana ; Mouli, K. Chandra ; Bhanumathi, A.
Author_Institution :
Dept. of Phys., Andhra Univ., Waltair, India
fDate :
30 Aug-2 Sep 1992
Abstract :
The hysteresis, dielectric, and piezoelectric properties of ternary 0.5PMN-0.5-PZT (lead magnesium niobate-lead zirconate titanate) ceramics with Ag substitution are described. These ceramics show good square hysteresis loops and thus are promising for thin-film memory applications. At high Ag concentrations the dielectric loss decreased, indicating an increase in the ordering of the structure. A marked increase in the piezoelectric properties, particularly the thickness coupling factor and the piezoelectric charge coefficient, d33, was observed
Keywords :
ceramics; dielectric hysteresis; electric domains; ferroelectric materials; lead compounds; magnesium compounds; piezoelectric materials; silver compounds; Ag concentrations; Ag substitution; Pb1-xAg2xMgO3NbO3(Zr 0.55Ti0.45)O3 ceramics; dielectric loss; dielectric properties; domain orientation; ordering; piezoelectric charge coefficient; piezoelectric properties; square hysteresis loops; structure; thickness coupling factor; thin-film memory applications; Calcination; Ceramics; Dielectric losses; Dielectric thin films; Hysteresis; Laboratories; Lead; Piezoelectric films; Solid state circuits; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300646
