Domain orientation and piezoelectric properties of Ag doped PMN-PZT ceramics

Author

Murty, K. V Ramana ; Murty, S. Narayana ; Mouli, K. Chandra ; Bhanumathi, A.

Author_Institution

Dept. of Phys., Andhra Univ., Waltair, India

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

144

Lastpage

147

Abstract

The hysteresis, dielectric, and piezoelectric properties of ternary 0.5PMN-0.5-PZT (lead magnesium niobate-lead zirconate titanate) ceramics with Ag substitution are described. These ceramics show good square hysteresis loops and thus are promising for thin-film memory applications. At high Ag concentrations the dielectric loss decreased, indicating an increase in the ordering of the structure. A marked increase in the piezoelectric properties, particularly the thickness coupling factor and the piezoelectric charge coefficient, d₃₃, was observed

Keywords

ceramics; dielectric hysteresis; electric domains; ferroelectric materials; lead compounds; magnesium compounds; piezoelectric materials; silver compounds; Ag concentrations; Ag substitution; Pb_1-xAg_2xMgO₃NbO₃(Zr _0.55Ti_0.45)O₃ ceramics; dielectric loss; dielectric properties; domain orientation; ordering; piezoelectric charge coefficient; piezoelectric properties; square hysteresis loops; structure; thickness coupling factor; thin-film memory applications; Calcination; Ceramics; Dielectric losses; Dielectric thin films; Hysteresis; Laboratories; Lead; Piezoelectric films; Solid state circuits; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300646

Filename

300646