Title :
Selective Epitaxial Growth of Si1-xGex for Device Applications and Nanostructures
Author :
Vescan, L. ; Loo, R. ; Dieker, C. ; Wickenhäuser, S. ; Hartmann, A. ; Apetz, R.
Author_Institution :
Institut fÿr Schicht-und Ionentechnik, Forschungszentrum Jÿlich GmbH, D-52425 Jÿlich Germany
Abstract :
In this article several features of the selective epitaxial growth of SiGe by LPCVD are discussed, such as the pad size dependence of growth rate, composition and strain relaxation. Finally, intense photoluminescence from sub¿m dots with SiGe/Si multiple quantum wells is presented.
Keywords :
Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; Holographic optical components; Hydrogen; Kinetic theory; Nanostructures; Silicon germanium; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
