DocumentCode
1921432
Title
Investigation on the Kink Effect in Poly-TFTs
Author
Valdinoci, M. ; Colalongo, L. ; Baccarani, G. ; Fortunato, G. ; Pécora, A. ; Policicchio, I.
Author_Institution
DEIS, Universit? di Bologna, viale Risorgimento 2, 40136 Bologna, Italy
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
1055
Lastpage
1058
Abstract
Similarly to c-Si SOI devices, in the output characteristics of poly-TFTs at high drain voltages a rapid increase of the drain current occurs. In this paper we investigate the nature of this current increase and show that it can be explained by the action of a parasitic bipolar transistor in the back-channel region, which enhances the effect of impact ionization occurring at the drain junction.
Keywords
Bipolar transistors; Character generation; Displays; Grain boundaries; Impact ionization; Impedance; Numerical simulation; Silicon; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435825
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