Title :
Triple Gate Oxide by Nitrogen Implantation Integrated in a 0.13um CMOS Flow
Author :
Carrère, J-P ; Grouillet, A. ; Guyader, F. ; Beverina, A. ; Bidaud, M. ; Halimaoui, A.
Author_Institution :
STMicroelectronics, Crolles Cedex, France
fDate :
24-26 September 2002
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194893
