DocumentCode
1921481
Title
2.3: Field emission in air between iridium-iridium oxide diode tips
Author
Brimley, Scott ; Miller, Mark S. ; Hagmann, Mark
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA
fYear
2010
fDate
26-30 July 2010
Firstpage
5
Lastpage
6
Abstract
We report on the fabrication and field emission properties of lithographic iridium-iridium oxide diodes operating in air, with gaps around 100 nm. Field emission currents of up to 1 μA were found, with signatures of Fowler-Nordhiem tunneling, space-charge limited emission, and possibly charging of the underlying oxide. Post field emission imaging showed surprisingly modest levels of damage, despite biases of around 200 V applied.
Keywords
field emission; iridium compounds; lithography; semiconductor diodes; space charge; tunnelling; Fowler-Nordhiem tunneling; lithographic iridium-iridium oxide diodes; post field emission imaging; space-charge limited emission; Aluminum; Current measurement; Fabrication; Iron; Light emitting diodes; Optical buffering; Semiconductor device measurement; field-emission in air; iridium oxide lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563224
Filename
5563224
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