DocumentCode :
1921494
Title :
RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications
Author :
Veloso, A. ; Jurczak, M. ; Cubaynes, F.N. ; Rooyackers, R. ; Mertens, S. ; Rothschild, A. ; Schaekers, M. ; Al-Shareef, H.N. ; Murto, R.W. ; Dachs, C. J J ; Badenes, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
159
Lastpage :
162
Keywords :
CMOS technology; Furnaces; Gate leakage; Helium; High-K gate dielectrics; MOS devices; Nitrogen; Oxidation; Plasma applications; Plasma devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194894
Filename :
1503824
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921494
