2.1: Field electron emission properties of n-type single crystal cubic boron nitride

We will report on the field emission properties of single crystal n-type cubic boron nitride (c-BN) for the first time. Vacuum annealed positive electron affinity (PEA) surface shows lower threshold voltages compared to H-terminated negative electron affinity (NEA) surface. An internal barrier height of c-BN surface with NEA was estimated to be 3.5 eV according to the Schottky barrier lowering model, which prevents electrons from approaching to the emitting surface. A higher electric field is required to reduce the internal barrier for emitting electrons compared to a small PEA surface. From the Fowler-Nordheim plots, the PEA was calculated to be about 0.6 eV, which dominates the electron emission from the vacuum annealed surface.