مرکز منطقه ای اطلاع رساني علوم و فناوري - Gate Length Scaling in High fMAX Si/SiGe n-MODFET

DocumentCode :

1921563

Title :

Gate Length Scaling in High fMAX Si/SiGe n-MODFET

Author :

Anie, F. ; Enciso-Aguilar, M. ; Crozat, P. ; Adde, R. ; Hackbarth, T. ; Seiler, U. ; Herzog, H.-J. ; König, U. ; Von Känel, H.

Author_Institution :

IEF, Orsay, France

fYear :

2002

fDate :

24-26 September 2002

Firstpage :

167

Lastpage :

170

Keywords :

Frequency; Germanium silicon alloys; Microwave devices; Noise figure; Noise measurement; Signal analysis; Silicon germanium;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN :

88-900847-8-2

Type :

conf

DOI :

10.1109/ESSDERC.2002.194896

Filename :

1503826

Link To Document :