• DocumentCode
    1921583
  • Title

    Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors

  • Author

    Kunz, V.D. ; de Groot, C.H. ; Hall, S. ; Anteney, I.M. ; Abdul-Rahim, A.I. ; Ashburn, P.

  • Author_Institution
    University of Southampton, United Kingdom
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    171
  • Lastpage
    174
  • Keywords
    Annealing; Bipolar transistors; CMOS technology; Degradation; Delay; Doping; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194897
  • Filename
    1503827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921583