DocumentCode :
1921588
Title :
A 2.4 GHz integrated CMOS power amplifier with micromachined inductors
Author :
Chen, Yu Christine ; Yong Kyu Yoon ; Laskar, J. ; Allen, M.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
1
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
523
Abstract :
This paper reports the development of the first 2.4 GHz monolithic-integrated CMOS power amplifier with micromachined inductors. The amplifier is implemented in a 0.24-/spl mu/m CMOS technology. The high-Q (quality factor) micromachined solenoid inductors are fabricated on the surface of the CMOS chip. For 2.5-V operation, the amplifier delivers 20-dBm output power with 31% PAE (power added efficiency) to 50-/spl Omega/ load.
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF integrated circuits; UHF power amplifiers; inductors; solenoids; 0.24 micron; 2.4 GHz; 2.5 V; 31 percent; CMOS power amplifier; PAE; UHF ICs; UHF amplifiers; micromachined inductors; output power; power added efficiency; quality factor; solenoid inductors; CMOS technology; Coils; Inductors; Operational amplifiers; Power amplifiers; Q factor; Radio frequency; Radiofrequency amplifiers; Solenoids; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.966946
Filename :
966946
Link To Document :
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