Title :
Enhanced Intrinsic Gain (gm/gd) of PMOSFETs with a Si
Author :
Lindgren, A.C. ; Hellberg, P.E. ; von Haartman, M. ; Wu, D. ; Menon, C. ; Zhang, S.L. ; Östling, M.
Author_Institution :
Royal Institute of Technology, Kista, Sweden
fDate :
24-26 September 2002
Keywords :
Annealing; Degradation; Epitaxial layers; Germanium silicon alloys; Information technology; MOSFETs; Microelectronics; Silicon germanium; Transconductance; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194898
