DocumentCode
1921607
Title
Monolithic 6W Ka-band high power amplifier
Author
Emrick, R.
Author_Institution
Motorola Labs., Motorola Inc., Chandler, AZ, USA
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
527
Abstract
The design and performance of a fully monolithic 6W Ka-band power amplifier is outlined. Excellent agreement between modeled and measured performance was demonstrated. This 3-stage power amplifier, which power combines 16 FETs on the third stage, is fully matched on chip to 50/spl Omega/ at the input and output wire bond pads. Performance achieved /spl sim/20.5 dB gain from 24-32 GHz with a peak power of >6W and PAE of /spl sim/21%. This performance was achieved using a 0.1 /spl mu/m power PHEMT process. To the authors knowledge, this is the highest output power demonstrated from a single device in this frequency band.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit measurement; integrated circuit modelling; 20.5 dB; 21 percent; 24 to 32 GHz; 3-stage power amplifier; 6 W; Ka-band; high power amplifier; power PHEMT process; wire bond pads; Bonding; FETs; Frequency; High power amplifiers; PHEMTs; Performance gain; Power amplifiers; Power generation; Semiconductor device measurement; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966947
Filename
966947
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