Title :
Excimer Laser Annealing Technology for Poly-Si Thin Film Transistors Fabrication
Author :
Kuriyama, H. ; Hamada, H.
Author_Institution :
SANYO Electric Co., Ltd., R&D Headquarters, Microelectronics Research Center, 180, Ohmori, Anpachi-Cho, Anpachi-Gun, Gifu 503-01, Japan
Abstract :
Excimer laser annealing technology is widely accepted one of the key technologies for establishing low temperature poly-Si TFT LCDs. Most of the main issues of crystallization process have been solved. The device characteristics and the performance of laser equipment have also improved significantly. The challenge of mass-producing this technology has finally begun. This paper presents research trends, practical issues, and the future prospects of this technology.
Keywords :
Annealing; Crystallization; Glass; Grain size; Laser theory; Optical device fabrication; Solid lasers; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
