DocumentCode :
1921649
Title :
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs
Author :
Esseni, David ; Abramo, Antonio
Author_Institution :
DIEGM, University of Udine, Italy
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
183
Lastpage :
186
Keywords :
CMOS technology; Degradation; Dielectrics; Electron mobility; MOSFET circuits; Particle scattering; Poisson equations; Quantum mechanics; Semiconductor device modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194900
Filename :
1503830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921649
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