DocumentCode
1921653
Title
Study of Drain-Induced-Barrier Lowering in Deep Submicron MOSFETs Versus Temperature
Author
Fikry, W. ; Ghibaudo, G. ; Dutoit, M.
Author_Institution
LPCS, ENSERG, BP 257, 38016 Grenoble, France.; Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
771
Lastpage
774
Abstract
A new method for the extraction of the Drain Induced Barrier Lowering (DIBL) parameter in a MOSFET is presented. This method is employed for the study of the influence of temperature on the DIBL phenomenon. The DIBL coefficient is found to be almost temperature independent between 50K and 300K. The method also allows the intrinsic output characteristics of the device to be re-calculated.
Keywords
CMOS process; Current measurement; Electron beams; Helium; MOS devices; MOSFETs; Temperature dependence; Testing; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435832
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