The Low-Frequency Noise Behaviour of Different SOI CMOS Technologies

The low-frequency (LF) noise behaviour of Silicon-on-Insulator MOSFETs fabricated in different SOI CMOS technologies is reported. It is shown that the kink-related excess LF noise, typical for the floating operation of partially depleted transistors can be eliminated by a proper choice of technology, i.e., either by using a fully depleted technology, or so-called dual-gate (gate-all-around) structures. Finally, it will be shown that there exists an empirical relationship between the input-referred noise spectral density and the transconductance, for a broad range of operation conditions and devices. The practical implications of this observation will be discussed.